page 1 general description features this high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in avalanche and commutation modes. the new energy efficient design also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, converters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. robust high voltage termination avalanche energy specified source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterized for use in bridge circuits i dss and v ds (on) specified at elevated temperature pin configuration symbol to-220 top view 1 23 gate drain source d s g n-channel mosfet absolute maximum ratings rating symbol value unit drain to current continuous pulsed i d i dm 10 40 a gate-to-source voltage continue non-repetitive v gs v gsm 20 40 v v total power dissipation derate above 25 p d 125 1.0 w w/ operating and storage temperature range t j , t stg -55 to 150 single pulse drain-to-source avalanche energy t j = 25 (v dd = 100v, v gs = 10v, i l = 10a, l = 6mh, r g = 25 ) e as 300 mj thermal resistance junction to case junction to ambient jc ja 1.7 62.5 /w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 FM740 10a 400v power mosfet
page 2 ordering information part number package .....................FM740................................................to-220 electrical characteristics unless otherwise specified, t j = 25 . cFM740 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 250 a) v (br)dss 400 v drain-source leakage current (v ds = 400 v, v gs = 0 v) (v ds = 400 v, v gs = 0 v, t j = 125 ) i dss 0.25 1.0 ma gate-source leakage current-forward (v gsf = 20 v, v ds = 0 v) i gssf 100 na gate-source leakage current-reverse (v gsr = 20 v, v ds = 0 v) i gssr ............... -100 na gate threshold voltage (v ds = v gs , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 5.0a) * r ds(on) ................ 0.4 .............. . 0.55 drain-source on-voltage (v gs = 10 v) (i d = 5.0 a) v ds(on) 6.0 v forward transconductance (v ds = 50 v, i d = 5.0a) * g fs .. 4.0 ................ mhos input capacitance c iss 1570 pf output capacitance c oss 230 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 55 pf turn-on delay time t d(on) 25 ns rise time t r 37 ns turn-off delay time t d(off) 75 ns fall time (v dd = 200 v, i d = 10.0 a, v gs = 10 v, r g = 10 ) * t f 31 ns total gate charge q g 46 63 nc gate-source charge q gs 10 nc gate-drain charge (v ds = 320 v, i d = 10.0 a, v gs = 10 v)* q gd 23 nc internal drain inductance (measured from the drain lead 0.25? from package to center of die) l d 4.5 nh internal drain inductance (measured from the source lead 0.25? from package to source bond pad) l s 7.5 nh source-drain diode characteristics forward on-voltage(1) v sd ................. 2.0 .................. v forward turn-on time t on ** ns reverse recovery time (i s = 10.0 a, v gs = 0 v, d is /d t = 100a/s) t rr 250 ns * pulse test: pulse width 300s, duty cycle 2% ** negligible, dominated by circuit inductance FM740 10a 400v power mosfet
page 3 typical electrical characteristics FM740 10a 400v power mosfet
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